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| SMD Type MOS Field Effect Transistor 2SK2109 SOT-89 IC MOSFET Unit: mm 1.50 +0.1 -0.1 Features Low on-resistance RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.3A High switching speed 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Idp PD Tch Tstg Rating 60 20 0.5 1.0 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(th) Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf ID=0.3A,VGS(on)=10V,RL=83 ,RG=10 ,VDD=25V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=0.3A VGS=4.0V,ID=0.3A VGS=10V,ID=0.3A 0.8 0.4 0.55 0.41 111 55 19 2.2 1.5 35 19 1.0 0.8 pF pF pF ns ns ns ns 1.5 Min Typ Max 1.0 10 2.0 Unit A nA V S Marking Marking NS www.kexin.com.cn 1 |
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